The definition of reverse recovery time (tr) is the time interval during which the current transitions from forward to a specified low value through zero.
Categories：Product knowledge Date：2025-02-05 Hits：426 View »
Fast Recovery Diode (FRD) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters, as a high-frequency rectifier diode, freewheeling diode, or damping diode.
Categories：Product knowledge Date：2025-01-20 Hits：399 View »
Characteristics of transient suppression diode - Transient suppression diode parameters
Categories：Product knowledge Date：2025-01-20 Hits：442 View »
Silicon Controlled Switch (SCS), also known as four terminal low-power thyristor. It belongs to novel and multifunctional semiconductor devices.
Categories：Product knowledge Date：2025-01-20 Hits：596 View »
Light controlled thyristor, also known as GK type optical switch transistor, is a type of photosensitive device.
Categories：Product knowledge Date：2025-01-17 Hits：384 View »
In order to correctly select thyristor components, it is necessary to understand their main parameters. Generally, the average or limit values of the parameters are provided in the product catalog, and the measured data of the components are marked on the product certificate.
Categories：Product knowledge Date：2025-01-17 Hits：408 View »
There are various types of thyristors to choose from, and they should be selected reasonably according to the specific requirements of the application circuit.
Categories：Product knowledge Date：2025-01-17 Hits：399 View »
What parameters should be considered when selecting LED driver power supplies that typically use MOS transistors as switching elements?
Categories：Product knowledge Date：2025-01-16 Hits：383 View »
The basic working principles of PNP semiconductor transistor and NPN semiconductor transistor are exactly the same. Taking NPN semiconductor transistor as an example, we will explain its internal current transmission process and then introduce its working principle.
Categories：Product knowledge Date：2025-01-16 Hits：356 View »
The problem here is that one control port supplies power to the bases of three PNP transistors. When one transistor fails, it cannot enter the saturation zone. Due to the different initial values of VBE and HFE for each transistor, which vary greatly with temperature changes, the three transistors cannot be biased correctly. The transistor with lower VBE has the highest bias resistance current, while the bias current of the other two transistors appears smaller.
Categories：Product knowledge Date：2025-01-16 Hits：358 View »
